Enhanced field emission of electrons from silicon surfaces was obtained by surface microstructuring, by means of
electrochemical oxidation in organic solutions containing HF. Morphological characterisations showed the formation of
cylindrical rods, randomly distributed with relative spacing of a few microns. They are originated at the top of silicon pyramids
and have typical diameter in the 100 nm range. Variable length in the 1–50 mm range was obtained, by adjusting the process
parameters. Electron field emission properties were characterised for several samples, prepared in different conditions: the
emission threshold was found to be strongly correlated with the overall charge exchanged during electrochemical oxidation. In
the most favourable conditions, the threshold field for the emission of an electron current Ith = 10 10 A was 11.1 V/mm.