Record number :
Title of article :
Microstructured silicon surfaces for field emission devices
Author/Authors :
G. Sotgiu، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
From page :
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Abstract :
Enhanced field emission of electrons from silicon surfaces was obtained by surface microstructuring, by means of electrochemical oxidation in organic solutions containing HF. Morphological characterisations showed the formation of cylindrical rods, randomly distributed with relative spacing of a few microns. They are originated at the top of silicon pyramids and have typical diameter in the 100 nm range. Variable length in the 1–50 mm range was obtained, by adjusting the process parameters. Electron field emission properties were characterised for several samples, prepared in different conditions: the emission threshold was found to be strongly correlated with the overall charge exchanged during electrochemical oxidation. In the most favourable conditions, the threshold field for the emission of an electron current Ith = 10 10 A was 11.1 V/mm.
Keywords :
electron field emission , Microstructured silicon , Si tip array
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
Link To Document :