Record number :
1000603
Title of article :
Dependence of the electronic parameters on the InyGa1 yAs quantum well width in modulation-doped AlxGa1 xAs/ InyGa1 yAs/GaAs strained single quantum wells
Author/Authors :
D.U. Lee، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
6
From page :
375
To page :
380
Abstract :
The variation of the electronic parameters in the subband as a function of the InyGa1 yAs quantum well width in modulationdoped strained AlxGa1 xAs/InyGa1 yAs/GaAs single quantum wells were investigated by means of Shubnikov-de Haas (S-dH) and Van der Pauw Hall-effect measurements. The fast Fourier transform (FFT) of the S-dH oscillations and the Hall-effect data showed that the carrier density and the mobility of the two-dimensional electron gas (2DEG) occupied in the subband increased as the quantum well width increased. The increase in the 2DEG density with increasing the InyGa1 yAs well width originated from an increase in the energy difference between the energy level of the electronic subband and Fermi energy, and the increase in the 2DEG mobility is attributed to a decrease of the scattering source. The electronic subband energies, the corresponding wavefunctions, and the Fermi energies in the AlxGa1 xAs/InyGa1 yAs/GaAs single quantum wells were calculated by a selfconsistent method taking into account the exchange-correlation effect together with the strain and nonparabolicity effects. These results indicate that the electronic parameters in AlxGa1 xAs/InyGa1 yAs/GaAs strained single quantum wells are significantly dependent on the quantum well width.
Keywords :
Quantum structures , Two-dimensional electron gas , Electronic structure
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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