Record number :
1000575
Title of article :
Crystallographically-dependent ripple formation on Sn surface irradiated with focused ion beam
Author/Authors :
H.X. Qian، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
6
From page :
140
To page :
145
Abstract :
The metallographically polished polycrystalline Sn surface was sputtered by 30 kV focused Ga+ ions at room temperature. The experiment was carried out using various FIB incidence angles (08, 158, 308, and 458) over a wide range of doses (1016– 1018 ions/cm2). The surface morphology was carefully characterized under the optical microscope, scanning electron microscope (SEM) and atomic force microscope (AFM). Ripples were observed on the irradiated areas even at the normal FIB incidence angle, which is not consistent with the Bradley–Harper (BH) rippling model. The orientation of ripples relies on crystallographic orientation rather than projected ion beam direction as predicted by BH model. The ripple wavelength is independent of ion dose, while ripple amplitude increases with ion dose. It is found that the ripples are formed by selforganization due to anisotropic surface diffusion in the low melting point metal
Keywords :
Surface diffusion , SN , Focused ion beam , ripple , AFM , CRYSTALLOGRAPHIC ORIENTATION
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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