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Title of article :
Estimating the extent of surface oxidation by measuring the porosity dependent dielectrics of oxygenated porous silicon
Author/Authors :
L.K. Pan، نويسنده , , Chang Q. Sun*، نويسنده , , Jimmy CM Li، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
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Abstract :
Surface oxidation and porosity variation play significant roles in the dielectric performance of porous silicon (PS) yet discriminating the contribution of these events is a challenge. Here we present an analytical solution that covers contributions from the components of silicon oxide surface, silicon backbone and voids using a serial–parallel capacitance structure. Agreement between modeling predictions and measurement has been realized, which turns out an effective method that enables us to estimate the extent of surface oxidation of a specimen bymeasuring the porosity dependent dielectric response of the chemically passivated PS, and provides guidelines that could be useful for designing dielectric porous structures with surface oxidation.
Keywords :
dielectric constant , Oxidation degree , Porosity , Porous silicon
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
Link To Document :