Record number :
1000553
Title of article :
Epitaxial growth of well-ordered ultra-thin Al2O3 film on NiAl (1 1 0) by a single-step oxidation
Author/Authors :
Thi Thi Lay، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
7
From page :
451
To page :
457
Abstract :
Well-ordered ultra-thin Al2O3 films were grown on NiAl (1 1 0) surface by exposing the sample at various oxygen absorption temperatures ranging from 570 to 1100 K at dose rates 6.6 10 5 and 6.6 10 6 Pa. From the results of low-energy electron diffraction (LEED), Auger electron spectrometer (AES) and X-ray photon spectroscopy (XPS) observations, it was revealed that oxidation mechanism above 770 K is different from well-known two-step process. At high temperature, oxidation and crystallization occurred simultaneously while in two-step process oxidation and crystallization occurred one after another. At high-temperature oxidation well-ordered crystalline oxide can be formed by a single-step without annealing. Well-ordered Al2O3 layer with thickness over 1 nm was obtained in oxygen absorption temperature 1070 K and a dose rate 6.6 10 6 Pa at 1200 L oxygen
Keywords :
Well-ordered crystalline oxides , LEED , AES , XPS , epitaxial growth , Oxidation , Ultra-thin Al2O3 , NiAl (1 1 0)
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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