Record number :
1000550
Title of article :
Influence of heat treatment on field emission characteristics of boron nitride thin films
Author/Authors :
J. Jiang*، نويسنده , , B.Y. Jiang، نويسنده , , C.X. Ren، نويسنده , , Y. T. Feng، نويسنده , , X. Wang، نويسنده , , X.H. Liu، نويسنده , , S.C. Zou، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
5
From page :
432
To page :
436
Abstract :
Boron nitride (BN) nanometer thin films are synthesized on Si (1 0 0) substrates by RF reactive magnetron sputtering. Then the film surfaces are treated in the case of the base pressure below 5 10 4 Pa and the temperature of 800 and 1000 8C, respectively. And the films are studied by Fourier transform infrared spectra (FTIR), atomic force microscopic (AFM) and field emission characteristics at different annealing temperature. The results show that the surface heat treatment makes no apparent influence on the surface morphology of the BN films. The transformations of the sample emission characteristics have to do with the surface negative electron affinity (NEA) of the films possibly. The threshold electric fields are lower for BN samples without heat-treating than the treated films, which possibly ascribed to the surface negative electron affinity effect. A threshold field of 8 V/mm and the emission current of 80 mA are obtained. The surface NEA is still presence at the heat treatment temperature of 800 8C and disappeared at temperature of 1000 8C.
Keywords :
BN films , Threshold electric fields , Emission current , Annealing temperature , Heat treatment , Negative electron affinity effect , Field emission
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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