Record number :
1000539
Title of article :
Fabrication of contact electrodes in Si for nanoelectronic devices using ion implantation
Author/Authors :
S.H. Lee and J.C. Kim ، نويسنده , , J.S. Kline، نويسنده , , J.R. Tucker، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
7
From page :
335
To page :
341
Abstract :
We fabricated contact electrodes in Si for nanoelectronic device fabrication using 40 keV As ion implantation. Complete amorphization of the Si surface with contact electrodes using 400 eV Ar ion irradiation at room temperature followed by annealing at 700 8C produced Si surface with negligible SiC crystallites suitable for ultrahigh vacuum scanning tunneling microscope nanolithography.We could locate the implanted and unimplanted regions on Si and fabricate Si dangling bond wires between two contact electrodes, which is the first step for the fabrication of nanoelectronic devices in Si using UHV STM nanolithography.
Keywords :
Contact electrode , SiC crystallite , UHV STM nanolithography , Ion implantation
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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