Record number :
1000520
Title of article :
Characterisation of erbium–erbium oxide bilayer structures deposited on GaSb substrates by electron beam evaporation
Author/Authors :
J.L. Plaza*، نويسنده , , C. Ruiz، نويسنده , , V. Bermu´dez، نويسنده , , E. Die´guez، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
8
From page :
193
To page :
200
Abstract :
In this work the structure of electron gun thermally evaporated films of Er/Er2O3 on Bridgman-grown GaSb substrates has been studied by means of atomic force microscopy and scanning electron microscopy. The microcrystalline structure of the uppermost Er film consists in hexagonal microcrystals, being around 1 mm in size with a surface roughness of about 200 nm for the evaporation conditions used here. In order to characterise the overall composition of this bilayer structure, Rutherford backscattering spectroscopy and secondary ion mass spectrometry analysis have also been carried out. The composition of the different layers could be determined and the analysis has also revealed diffusion processes between the layers and the substrate. The presence of Sb diffused from the substrate has been observed both in the oxide and metal layer and the formation of an Sbrich region between the substrate and the oxide layer has also been proved. It has also been identified that the presence of a small amount of Er into the substrate and the SIMS spectra have established the metal–oxide–semiconductor nature of the structure
Keywords :
gallium antimonide , secondary ion mass spectrometry , Rutherford backscattering
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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