Record number :
1000506
Title of article :
Preparation and characterization of Zn–Se bilayer thin film structure
Author/Authors :
M. Singh*، نويسنده , , Y.K. Vijay، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
8
From page :
79
To page :
86
Abstract :
ZnSe films were prepared by a stacked elemental layer deposition method on glass substrates at a pressure 10 5 Torr. The films were rapid thermal annealed (RTA) using halogen a lamp for different times to get a homogeneous structure of ZnSe thin films. The films were found to be p-type in nature. The band gap was found to vary with annealing time due to removal of defects and increase grain size of films. It was also observed by X-ray diffraction (XRD) pattern that the grain size of films increase with annealing time. The lattice constant for cubic structure of these films was found to be a ¼ 5.72 A ° . Rutherford back scattering data also confirmed mixing of the elements with annealing time. Published by Elsevier B.V.
Keywords :
Inter-diffusion , annealing , thermoelectric power , Semiconductor , RBS , optical band gap , XRD
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2005
Link To Document :
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