Diamond films (DF) were prepared on P-type h1 0 0i oriented Si substrates by hot filament chemical vapor deposition
(HFCVD). In order to study the lattice damage produced by ion beam doping, the films were implanted with 100 keV Heþ to
fluences of 5 1014 to 3 1016 cm 2, respectively. Scanning electron microscopy (SEM) and Raman spectra reflected that the
DF were sequentially damaged versus radiation fluence. When the radiation fluence was smaller, the lattice damages could be
partially removed by post-annealing. Increasing the radiation fluence, the DF grains decrease in size and become vague in
boundaries. In addition, electrical measurements were also carried out. Post-annealing stimulated the transformation of sp3
bonded configuration to amorphous and/or micro-polycrystalline graphite.
Diamond films , Ion implantation , damage , Reorganization