Record number :
Title of article :
Chemical deposition and characterization of copper indium disulphide thin films
Author/Authors :
H.M. Pathan b، نويسنده , , C.D. Lokhande، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Pages :
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Abstract :
A simple chemical deposition method was used to prepare copper indium disulphide thin films. The method is based on sequential immersion of substrate into different cationic and anionic precursor solutions and rinsing before every immersion with double distilled water. In the present investigation, CuInS2 films have been deposited using chemical deposition method. These films were characterized for their structural, surface morphological, compositional and electrical properties by using Xray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), Rutherford back scattering (RBS), electrical resistivity and thermoemf measurement techniques.
Keywords :
CuInS2 , chemical deposition , Physico-chemical characterization
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
Link To Document :