Record number :
1000429
Title of article :
Crystallization kinetics of hydrogenated amorphous silicon thick films grown by plasma-enhanced chemical vapour deposition
Author/Authors :
J. Farjas، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
4
From page :
165
To page :
168
Abstract :
The crystallization kinetics of hydrogenated amorphous silicon thick films grown by plasma-enhanced chemical vapour deposition is studied by differential scanning and isothermal calorimetry in a wide temperature range varying from 600 to 720 8C. The reported kinetics is found to correspond to three-dimensional growth. The kinetic parameters obtained are in good agreement with those already published on thin films.
Keywords :
amorphous silicon , Crystallization kinetics , DSC
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2004
Link To Document :
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