Record number :
Title of article :
Ion beam synthesis of 3C-SiC layers in Si and its application in buffer layer for GaN epitaxial growth
Author/Authors :
Y. Ito، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
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Abstract :
A 180 keV carbon implantation with an ion dose of 8.0 1.0 1017 Cþ/cm2 into Si(1 1 1) wafer has been investigated in order to examine the synthesis of 3C-SiC at the substrate temperature Ts ¼ RT to 800 8C and in the subsequent annealing treatment at the temperature Ta ¼ 1000–1250 8C/2 h. The combination at Ts 500 8C and at Ta > 1200 8C is the most suitable for the synthesis of crystalline 3C-SiC with the same orientation of the Si(1 1 1) substrate. The crystalline 3C-SiC layer was used as a buffer layer for the formation of GaN/SiC/Si structure using MOVPE for the GaN growth. After removal of upper layers on the 3C-SiC by chemical etching, a crack-free epitaxial GaN layer of 3 mmthickness has been successfully synthesized
Keywords :
annealing , Crystalline 3C-SiC , GaN/SiC/Sistructure , MOVPE growth GaN , High-dose carbon implantation , Substrate temperature
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
Link To Document :