Record number :
1000397
Title of article :
Mechanical and piezoresistive properties of InAs/AlGaSb cantilevers
Author/Authors :
H. Yamaguchi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
5
From page :
649
To page :
653
Abstract :
We fabricated piezoresistive micromechanical cantilevers using InAs/AlGaSb heterostructures grown by molecular beam epitaxy on GaAs (1 1 1) A and (0 0 1) substrates. The piezoresistance allows the cantilever displacement and mechanical resonance to be electrically detected. The cantilever fabricated on (0 0 1) substrate showed much smaller quality factors, indicating it has much larger energy dissipation than the one on (1 1 1) A. The measurement of the temperature dependence of the elastic constant suggests increased unharmonic lattice vibration for the (0 0 1) sample. These differences between (1 1 1) A and (0 0 1) samples could be induced by the high density of misfit dislocations formed in the (0 0 1) heterostructures.
Keywords :
(1 1 1) A , Piezoresistance , MEMS , InAs
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2004
Link To Document :
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