Record number :
1000385
Title of article :
Nano-scale patterning on sulfur terminated GaAs (0 0 1) surface by scanning tunneling microscope
Author/Authors :
Yuki Yagishita، نويسنده , , Yusuke Toda، نويسنده , , Masakazu Hirai، نويسنده , , Hiroki Inomata Fujishiro، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
6
From page :
581
To page :
586
Abstract :
We perform nano-scale patterning on a sulfur (S) terminated GaAs (0 0 1) surface by a scanning tunneling microscope (STM) in ultra-high vacuum (UHV). A multi-layer of S deposited by using (NH4)2Sx solution is changed to a mono-layer after annealing at 560 8C for 15 h, which terminates the GaAs (0 0 1) surface. Groove structures with about 0.23 nm in depth and about 5 nm in width are patterned successfully on the S-terminated surface. We investigate dependences of both depth and width of the patterned groove on the tunneling current and the scanning speed of tip. It is observed that topmost S atoms are extracted together with first-layer Ga atoms, because of the larger binding energy of S–Ga bond
Keywords :
Sulfur termination , GaAs (0 0 1) , Scanning Tunneling Microscope , Nano-scale patterning , Nano-structure , Groove structure
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2004
Link To Document :
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