Record number :
1000380
Title of article :
Conduction band anisotropy effects on the confined electron states of SiC/SiO2 quantum dots
Author/Authors :
J.S. de Sousa، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
6
From page :
553
To page :
558
Abstract :
The effects of full anisotropy of the silicon carbide (SiC) band structure together with alignment of the conduction band valleys, nanocrystal geometry, and external field, upon 4H-and 6H-SiC polytypes is addressed in this work. Our calculations show that the combination of shape, electric field direction and band structure anisotropy may have strong consequences for confined electron energies SiC nanocrystals (NCs). The break of degeneracy under specific conditions will influence the design of device applications and advances in SiC nanocrystal-based technology.
Keywords :
Band structure anisotropy , Quantum dots , SiC
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2004
Link To Document :
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