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Title of article :
Differences of Stark shift behavior in Si/SiO2 quantum wells and quantum dots
Author/Authors :
J.S. de Sousa، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
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Abstract :
We report strong differences on the quantum-confined Stark effect (QCSE) behavior between Si/SiO2 quantum dots (QDs) and quantum wells (QWs). In QWs, the QCSE exhibits strong non-linearities, which can be fitted to second and/or fourth order polynomials with respect to the applied electric field (EF), depending on the QW size and energy level. In contrast, for QDs the QCSE behavior is practically linear with the applied field. These differences are explained by means of the time-independent perturbation theory, where we show that for QWs, the parity differences between the (1D) wavefunctions and the perturbation potential make the first and third order corrections to vanish, while this parity difference is relaxed in QDs, making first order corrections (linear in EF) to prevail with respect to the high-order contributions
Keywords :
Si/SiO2 , Stark shift , Quantum dots , Quantum wells
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
Link To Document :