Record number :
1000348
Title of article :
Investigation of formation processes of an anodic porous alumina film on a silicon substrate
Author/Authors :
Hirokazu Shiraki، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
5
From page :
369
To page :
373
Abstract :
We investigated formation processes of a porous anodic alumina film on a p-type silicon (Si) substrate using infrared absorption spectroscopy in the multiple internal reflection geometry (MIR-IRAS). We observed drastic IR spectral changes when anodization took place near the interface between an aluminum (Al) layer and a Si substrate. The intensity of absorption peaks due to porous anodic alumina increased with a decrease in anodic current density and it decreased simultaneously with formation of silicon oxides (SiO2) at the interface between a porous anodic porous alumina film and a Si substrate after appearance of a spike of anodic current density which indicated changes of states of electric double layer at the interface between an electrolyte and an electrode due to contact between an electrolyte and a Si substrate. The results suggested that the formation of SiO2 nanodots on a Si substrate promoted penetration of electrolytes to peel the porous anodic alumina film from it.
Keywords :
Liquid–solid interface , porous alumina , Nanostructure , Infrared absorption spectroscopy , Electrochemistry , Anodization
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2004
Link To Document :
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