Record number :
1000346
Title of article :
Luminescence in Cu-implanted ZnO thin films
Author/Authors :
Isao Sakaguchi، نويسنده , , Syunichi Hishita، نويسنده , , Hajime Haneda، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
5
From page :
358
To page :
362
Abstract :
New ion implantation techniques were used to study phenomena related to emission in ZnO thin films implanted with Cu. Room temperature Cu implantation was at 125 keV, in a Cu dose range of 1 1012 to 2 1014 ions/cm2. The intensity of bandedge emission was continuously decreased with increasing Cu dose because of implantation-induced damage. After annealing the films at 800 8C for 3 h, we observed luminescence in the visible region; this was enabled by recovery from the implantation damage and the Cu phosphor. Emission at about 555 nm was observed in the Cu dose range from 1 1012 to 2 1014 ions/cm2.
Keywords :
Cu dose , implantation , Luminescence
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2004
Link To Document :
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