Record number :
1000324
Title of article :
Effects of growth sequence on atomic level interfacial structures and characteristics of GaInP/GaAs/GaInP double heterostructures grown by low-pressure organometallic vapor phase epitaxy
Author/Authors :
T. Yoshikane، نويسنده , , A. Urakami، نويسنده , , A. Koïzumi، نويسنده , , S. Hisadome، نويسنده , , M. Tabuchi، نويسنده , , K. Inoue، نويسنده , , Y. Fujiwara1، نويسنده , , Y. Takeda، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
5
From page :
246
To page :
250
Abstract :
We have investigated atomic level interface structures and characteristics of GaInP/GaAs/GaInP double heterostructures grown by low-pressure organometallic vapor phase epitaxy. In photoluminescence (PL) measurements, interface-related emission was clearly observed in the sample grown at 580 8C, while it disappeared in the sample grown at 540 8C. X-ray crystal truncation rod scattering measurement revealed that In atoms distribute significantly in the GaAs layer ( 12 ML) when the GaAs-on-GaInP interface is grown at 580 8C and the distribution is highly suppressed when grown at 540 8C. By insertion of a thin GaInP layer grown at 540 8C to the GaAs-on-GaInP interface in GaInP/GaAs/GaInP laser diodes, threshold current densities were much lower and more uniform than those of the diodes with GaAs-on-GaInP interfaces grown at 580 8C.
Keywords :
GaAs-on-GaInP interface , OMVPE , Sequence dependence , Threshold current density
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2004
Link To Document :
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