Record number :
1000321
Title of article :
Surface structure of InGaAs/InP(0 0 1) ordered alloy during and after growth
Author/Authors :
Takahiro Moria، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
5
From page :
230
To page :
234
Abstract :
We investigated the surface of ordered InGaAs alloys lattice-matched with InP(0 0 1) substrates during and after growth using reflectance difference or reflectance anisotropy spectroscopy (RDS or RAS). Bulk atomic ordering was investigated by Raman spectroscopy and ex situ RDS measurements. We observed that a (2 3) surface during growth is a trigger for the bulk cation ordering in the InGaAs/InP(0 0 1) system. Furthermore a (4 3) structure was observed after the growth stopped. In terms of RD measurements, a c(8 6) or (8 3) surface structure, including one-dimensional disorder boundaries, are possible structures for the two observed surfaces.
Keywords :
Spontaneous ordering , Reflectance difference spectroscopy , Reflectance anisotropy spectroscopy , Surface structure
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2004
Link To Document :
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