Record number :
1000319
Title of article :
X-ray diffraction study on GaAs(0 0 1)- 2 4 surfaces under molecular-beam epitaxy conditions
Author/Authors :
M. Takahasi ، نويسنده , , Y. Yoneda، نويسنده , , J. Mizuki، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
5
From page :
219
To page :
223
Abstract :
The GaAs(0 0 1)-(2 4) reconstructed surface was investigated by in situ surface X-ray diffraction. X-ray diffraction patterns were measured with increasing substrate temperature within the b phase of GaAs(0 0 1)-(2 4) in a constant As flux of 5 10 7 Torr. At relatively low temperatures up to 545 C, the observed X-ray diffraction patterns agree well with the b2(2 4) surface. However, a different X-ray diffraction pattern was obtained at temperatures close to the a phase, while the 2 4 periodicity still persisted. This change is explained by partial As-dimer desorption which results in a mixture of the b2(2 4) and a2(2 4) structures
Keywords :
and reflection , Diffraction , Surface relaxation and reconstruction , Gallium arsenide , Molecularbeam epitaxy , X-Ray scattering , Semiconductor
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2004
Link To Document :
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