Record number :
1000307
Title of article :
Influence of C incorporation on the initial growth of epitaxial NiSi2 on Si(1 0 0)
Author/Authors :
Emi Okada، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
6
From page :
150
To page :
155
Abstract :
The initial growth of NiSi2 on Si(1 0 0) surfaces with a thin C layer by scanning tunneling microscopy has been investigated. The surface roughening with the formation of epitaxial NiSi2 domains is effectively suppressed even by the introduction of a submonolayer thick C layer. The reduction of an average size of epitaxial NiSi2 islands and the increase in the nucleation density of NiSi2 islands are caused by incorporating of C atoms into the surface before the 4.8-monolayer thick Ni deposition. The adsorption condition of C atoms on the surface more strongly influences the density and the average size of epitaxial NiSi2 islands rather than the total amount of deposited C atoms does.
Keywords :
nickel , silicide , Scanning tunneling microscopy , Carbon , Epitaxial growth
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2004
Link To Document :
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