Record number :
Title of article :
Quality of SiO2 and of SiGe formed by oxidation of Si/Si0.7Ge0.3 heterostructure using atomic oxygen at 400 8C
Author/Authors :
H. Nohira، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
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Abstract :
The oxidation of a 2.7-nm-thick layer of Si formed on a layer of Si0.7Ge0.3 using atomic oxygen at 400 8C was studied with the aid of angle-resolved X-ray photoelectron spectroscopy and high-resolution Rutherford backscattering spectroscopy. Analysis of the measurement results revealed that: (1) an appreciable number of Ge atoms diffused into the Si layer during the formation of a 3-nm-thick Si layer on the Si0.7Ge0.3 layer at 720 8C; (2) when the entire Si layer was oxidized, 1.8% of the Si layer remained in the SiO2 in the form of Si0.7Ge0.3 alloy; and (3) an abrupt compositional transition took place at the SiO2/SiGe interface.
Keywords :
Angle-resolved photoelectron spectroscopy , Rutherford back scattering , Depth profiling , SiO2/Si interface
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
Link To Document :