Record number :
1000301
Title of article :
Hydrogen interaction with Si(1 1 1) ffiffiffi 3 p x ffiffiffi 3 p -B surfaces
Author/Authors :
Masamichi Yoshimura، نويسنده , , Kazutaka Watanabe، نويسنده , , Kazuyuki Ueda، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
4
From page :
115
To page :
118
Abstract :
Chemisorption of atomic hydrogen on the Si(1 1 1) ffiffiffi 3 p x ffiffiffi 3 p -B surface has been studied using scanning tunneling microscopy (STM). Two kinds of specimens with different surface defect density are examined and compared. Upon hydrogen exposure of 120 Langmuir (L), cluster formation is observed on the ffiffiffi 3 p x ffiffiffi 3 p -B surface with high defect density of 50%. The number of clusters increases with exposure and an entire surface is covered with the clusters up to 500 L. In contrast, no cluster formation is observed on the surface with low defect density of 3% even after exposure of 4000 L. This result indicates the inhibition of hydrogen etching of the surface Si layer, as reported previously. Hydrogen-reacted species, which cannot be explained by previous theoretical results, are clearly resolved in STM images
Keywords :
Silicon , STM , hydrogen , Si(1 1 1) , boron
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2004
Link To Document :
بازگشت