Record number :
Title of article :
Adsorption of thiophene on a Si(0 0 1)-2 1 surface studied by photoelectron spectroscopy and diffraction
Author/Authors :
M. Shimomura، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
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Abstract :
Chemisorption of thiophene on a Si(0 0 1) surface has been studied by synchrotron radiation induced photoelectron spectroscopy (SRPES). Two adsorption-related components in Si 2p and S 2p spectra are observed after exposure of thiophene. It is suggested that the two components of Si 2p are ascribed to silicon bonded to hydrocarbon and sulfur. The core-level shift resolved photoelectron diffraction (PED) result indicates that the low-kinetic-energy component of S 2p can be ascribed to 2,5- dihydrothiophehe (DHT)-like species. Another S 2p component could be assigned to dissociated sulfur based on the results of PED and time evolution of the spectrum under irradiation. These assignments are consistent with the core-level shift of S 2p.
Keywords :
Thiophene , Silicon , Surface structure , Photoelectron spectroscopy , Photoelectron diffraction
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
Link To Document :