Record number :
1000282
Title of article :
Photoelectron spectroscopy study of oxygen vacancy on vanadium oxides surface
Author/Authors :
Qi-Hui Wu، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
6
From page :
473
To page :
478
Abstract :
The thermal properties of vanadium pentoxide (V2O5) thin films have been studied by X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). XPS and UPS data demonstrate that V2O5 thin films are gradually reduced by annealing in the ultrahigh vacuum chamber at temperatures up to 400 8C due to the formation of oxygen vacancy. The oxygen defect in the remaining thin film leads to the appearance of a new emission line at about 10.3 eV in the valence bands, which is direct evidence for oxygen vacancy on a solid surface.
Keywords :
XPS , UPS , Oxygen vacancy , Vanadium pentoxide
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2004
Link To Document :
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