Record number :
1000269
Title of article :
Correlation between series resistance and parameters of Al/n-Si and Al/p-Si Schottky barrier diodes
Author/Authors :
M. Siad، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
11
From page :
366
To page :
376
Abstract :
The aim of this work is to experimentally investigate the effect of series resistance on the non-ideal silicon Schottky diode (SSD), in our process fabrication. Two types of diodes, with high resistivity silicon bulk, Al/n-Si and Al/p-Si have been prepared. The parameter RS, the ideality factor n and the barrier height fB0 are determined by performing different plots from the experimental forward bias current–voltage (I–V) and reverse bias capacitance–voltage (C–V) measurement. The high resistivity Schottky diode is currently used in nuclear detection, we tested these junctions in a particle spectrometry and measured their energy resolution
Keywords :
Schottky barrier , Silicon , Ohmic contact , a-spectrometry , series resistance
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2004
Link To Document :
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