The combination of fast, non-destructive, and surface-sensitive spectroscopic methods, surface photovoltage technique
(SPV), spectroscopic ellipsometry in the ultraviolet and visible region (UV-VIS-SE), and Fourier-transform infrared ellipsometry
(FTIR SE) provide detailed information about the influence of surface microroughness and the hydrogen and oxide
coverage on electronic properties of H-terminated and oxidized silicon interfaces during the wet-chemical preparation process.
By systematic investigations of common and newly developed wet-chemical preparation methods, correlations were established
between the preparation-induced surface morphology, the resulting interface charge, the density, and energetic distributions of
interface states. It was shown that the efficiency of passivation on wet-chemically treated Si (1 1 1) and Si (1 0 0) interfaces and
the stability of H-termination in clean-room atmosphere strongly depends on the remaining surface microroughness and initial
interface state density.
Silicon surfaces , Wet-chemical cleaning , Hydrogen-termination , Native oxidation , Spectroscopic ellipsometry , Surfacephotovoltage