Record number :
1000157
Title of article :
Reductions in interface defects, Dit, by post-oxidation plasma-assisted nitridation of GaN–SiO2 interfaces in MOS devices
Author/Authors :
C. Bae، نويسنده , , G. Lucovsky، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
5
From page :
475
To page :
479
Abstract :
This paper applies remote plasma processing techniques, remote plasma assisted oxidation (nitridation) RPAO(N) and RP enhanced chemical vapor deposition (RPECVD), developed originally for fabrication of Si MOS devices with deposited SiO2, Si3N4 and Si oxynitride alloys to the formation of device-quality GaN MOS devices. Significant improvements in device performance for GaN–SiO2 interfaces are demonstrated by following an RPAO process step that forms the device interface with an interface nitridation RPAN step prior to the deposition of an SiO2 dielectric film by RPECVD. On-line Auger electron spectroscopy (AES) is used to monitor interface bonding for different ordering of RPAO and RPAN process steps. # 2004 Published by Elsevier B.V.
Keywords :
Semiconductor–dielectric interfaces , Interfacial defects , Remote plasma processing
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2004
Link To Document :
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