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Title of article :
Polarization anisotropy in the photoluminescence from InGaP layers grown by liquid phase epitaxy
Author/Authors :
T. Prutskij، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
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Abstract :
The polarization anisotropy of the photoluminescence (PL) of InGaP films grown by liquid phase epitaxy (LPE) on GaAs substrates was studied. Photoluminescence measurements were performed in a wide temperature (4–250 K) range for emitted radiation polarized along the [0 1 1] and [0 1 1] directions. Donor–acceptor transitions dominate at low temperature (4 K), while band-to-band transition does at higher temperature (250 K). A difference between the energy position of the spectral peaks for [0 1 1] and [0 1 1] polarizations was found. This can be explained by the presence of compressive and tensile strained regions along the [0 1 1] direction. Moreover, the difference in the line shape of the spectra for different polarizations indicates the presence of anisotropy for these crystallographic directions. # 2004 Elsevier B.V. All rights reserved
Keywords :
Photoluminescence , liquid phase epitaxy , III–V Semiconductors
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
Link To Document :