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Title of article :
Study of dual-valley transport across a multiquantum barrier to enhance carrier confinement
Author/Authors :
M.R. Brown، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
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Abstract :
Red-emitting quantum well (QW) 630 nm laser diodes have many potential applications in industry and medicine. However, manufacture of such short wavelength lasers is impeded by severe electron leakage from the active region, which is predominantly attributed to loss of thermally activated electrons, via the inherently low conduction band offsets and possible inter-valley transfer to the lower energy X-band minima. To combat the high leakage current in such devices, we have implemented a multiquantum barrier (MQB) into the p-type cladding region of the device, and theoretically optimised the structure to reduce X-band transfer and predict effective enhancement to the intrinsic barrier height. # 2004 Elsevier B.V. All rights reserved
Keywords :
Multiquantum barrier , Inter-valley transport , AlGaInP laser diodes , Superlattice , tunnelling
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
Link To Document :