Record number :
1000146
Title of article :
Lattice distortion due to surface treatment of bias sputtering revealed by extremely asymmetric X-ray diffraction
Author/Authors :
Y. Yoshida، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
6
From page :
409
To page :
414
Abstract :
Strain fields near InGaP or GaAs surfaces due to bias sputtering (Ar plasma-ion irradiation) for surface cleaning were measured by using a strain-sensitive X-ray diffraction technique. An extremely asymmetric InGaP or GaAs 1 1 3 reflection of the sample was measured to observe strain fields.We found that strain fields near InGaP or GaAs surfaces due to bias sputtering are affected by the bias voltage (Ar plasma-ion irradiation energy) used in this surface-cleaning treatment. By comparing measured 1 1 3 rocking curves and calculated ones based on the dynamical theory of X-rays, we estimated the thickness of a strained layer and a maximum strain at the surface. Resulting estimated parameters clearly show the bias sputtering to have two effects. One should be corresponding to the surface cleaning process of removing oxides on surfaces. The other is the lattice expansion, which is thought to be caused by compositional fluctuation near the surface or peening process of Ar ion. # 2004 Elsevier B.V. All rights reserved
Keywords :
Lattice distortion , Ar plasma-ion irradiation , semiconductors
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2004
Link To Document :
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