Record number :
1000125
Title of article :
Mechanism of hydrogen, oxygen and humidity sensing by Cu/Pd-porous silicon–silicon structures
Author/Authors :
V.G. Litovchenko، نويسنده , , T.I. Gorbanyuk*، نويسنده , , V.S. Solntsev، نويسنده , , A.A. Evtukh، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
6
From page :
262
To page :
267
Abstract :
The effect of the adsorption of gas mixtures on current–voltage (I–V) characteristics of porous silicon (PS)-based metalinsulator- semiconductor (MIS)-structures was studied. The PS morphology was characterized by scanning electron (SEM) and atomic force (AFM) microscopes. According to the parameters of electrochemical process, PS layers were found to have a different microstructure. In particular, an inorganic polymer film under an appropriate anodic bias coats the surface of PS. Furthermore, it was found that the polymer film on PS surface influences on chemisorption of the test gas molecules. This effect may be associated with the electrical conductivity of such polymer layers, and it has been discussed using the energy band diagram of Schottky-like structures. # 2004 Elsevier B.V. All rights reserved.
Keywords :
gas sensitivity , Inorganic polymer film , Porous silicon , Schottky barrier
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2004
Link To Document :
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