Record number :
1000122
Title of article :
Electronic structures of ultra-thin silicon carbides deposited on graphite
Author/Authors :
Y. Baba*، نويسنده , , T. Sekiguchi، نويسنده , , I. Shimoyama، نويسنده , , Krishna G. Nath، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Pages :
5
From page :
246
To page :
250
Abstract :
Electronic structures of ultra-thin silicon carbide films have been investigated by X-ray photoelectron spectroscopy (XPS) and Si K-edge X-ray absorption near edge structure (XANES) using linearly polarized synchrotron soft X-rays. Silicon carbide films were deposited on the surface of highly oriented pyrolytic graphite (HOPG) by ion beam deposition method. Tetramethylsilane (Si(CH3)4) was used as a discharge gas. The XPS and XANES features for the thick layers were similar to those for the bulk SiC. For sub-monolayered films, the Si 1s binding energy in XPS was higher by 2.5 eV than that for bulk SiC. This suggests the existence of low-dimensional SiCx where the silicon atoms are more positively charged than those in bulk SiC. After annealing the sub-monolayered film at 850 8C, a new peak appeared around 1840 eVin the XANES spectrum. The energy of this new peak was lower than those for any other silicon compounds. The low-energy feature of the XANES peak suggests the existence of p*-like orbitals around the silicon atom. On the basis of the polarization dependencies of the XANES spectra, it was revealed that the direction of the p*-like orbitals are nearly perpendicular to the surface. We conclude that sub-monolayered SiCx film exhibits flat-lying structure of which configuration is similar to a single sheet of graphite. # 2004 Elsevier B.V. All rights reserved.
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2004
Link To Document :
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