Record number :
1000096
Title of article :
Initial stages of Yb/Si(1 0 0) interface growth: 2 × 3 and 2 × 6 reconstructions
Author/Authors :
M. Kuzmin، نويسنده , , R.E. Per?l?، نويسنده , , P. Laukkanen، نويسنده , , R.-L. Vaara، نويسنده , , M.A. Mittsev، نويسنده , , I.J. V?yrynen، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
12
From page :
196
To page :
207
Abstract :
The initial stages of Yb/Si(1 0 0) interface growth have been studied by scanning tunneling microscopy, low-energy electron diffraction, Auger electron spectroscopy (AES), thermal desorption spectroscopy, and work-function change measurements. It is shown that a two-dimensional (2D) adsorbed layer of Yb forms at low coverage (<0.5–0.6 monolayers (ML)), followed by three-dimensional (3D) growth of Yb silicide phase at higher coverages. The two surface reconstructions of Yb/Si(1 0 0), 2×3 and 2×6 phases, are identified in submonolayer regime. The submonolayer adsorbed phases are found to exhibit higher thermal stability compared to the silicide one. The formation of adsorbed phases results in a large decrease of work-function (by up to 1.8 eV), which suggests that the reconstructions are terminated by Yb and a charge transfer occurs from top Yb atoms to underlying Si substrate. Moreover, the structural model of the 2×3 reconstruction is proposed and the features of the 2×6 phase are interpreted.
Keywords :
Thermal desorption spectroscopy , Scanning tunneling microscopy , Ytterbium , Low-energy electron diffraction , Work-function measurements , Silicon
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2003
Link To Document :
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