Record number :
Title of article :
Silicon nitride deposited by ECR–CVD at room temperature for LOCOS isolation technology
Author/Authors :
Marcus A Pereira، نويسنده , , José A.F. Diniz-Filho، نويسنده , , Ioshiaki Doi، نويسنده , , Jacobus W Swart، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
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Abstract :
For LOCOS application, silicon nitride (SiNx) insulators have been deposited by ECR–CVD at room temperature and with N2 flows of 2.5, 5, 10 and 20 sccm on pad-SiO2/Si or on Si substrates. The obtained SiNx/Si structures were used to analyze the SiNx characteristics. FTIR analyses reveal the presence of SiN and NH bonds. The refractive indexes between 1.88 and 2.48 and the thickness between 120 and 139 nm were determined by ellipsometry. With these thickness values, the deposition rates of 9.6–10.1 nm/min and the BHF etch rates of 2–86 nm/min were determined. On the SiNx/pad-SiO2/Si structures, the LOCOS process was performed. Optical and SEM microscopy analyses were used to investigate the SiNx resistance to thermal oxidation, made at 1000 °C, and the bird’s beak in the obtained LOCOS structures, respectively. These analyses reveal that SiNx insulator performed with N2 flows higher than 2.5 sccm presented high quality to LOCOS isolation technology.
Keywords :
Local oxidation , Silicon nitride , Electron cyclotron resonance (ECR) , Chemical vapor deposition (CVD)
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
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