Record number :
Title of article :
A structural analysis of Bi/Si(1 0 0) 2 × n surfaces by ICISS
Author/Authors :
N Oishi، نويسنده , , N Saitoh، نويسنده , , M Naitoh، نويسنده , , S Nishigaki، نويسنده , , F Shoji، نويسنده , , S Nakanishi، نويسنده , , K Umezawa، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
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Abstract :
We have investigated the structure of Bi-adsorbed Si(1 0 0) 2×n surfaces with various Bi coverages by low-energy electron diffraction (LEED) and impact-collision ion scattering spectroscopy (ICISS). Intensities of He+ scattered from Bi and Si atoms were measured as a function of ion incidence angle. Bi–Bi interatomic distances for the toplayer including Bi-dimers were estimated by the shadow-cone technique. Bi-signal peaks appeared even at considerably large angles of incidence, which are attributed to collisions with Bi atoms in sub-surface layers. Bi adsorption is not completed at a mono-layer level, but continues to form multiple layers, fitted in the Si lattice, in the Frank-van der Merwe growth mode.
Keywords :
Bismuth , Silicon , Impact-collision ion scattering spectroscopy , Surface structure
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
Link To Document :