J.H. He، نويسنده , , W.W. Wu، نويسنده , , H.H. Lin، نويسنده , , S.L. Cheng، نويسنده , , Y.L Chueh، نويسنده , , L.J Chou، نويسنده , , C.J. Tay and L.J. Chen، نويسنده ,
The structural evolution in Ge+ implantation amorphous Si has been investigated by high-resolution transmission electron microscopy in conjunction with auto-correlation function (ACF) analysis. Si(0 0 1) wafers were implanted with 5 keV Ge+ to a dose of 5×1015 ions/cm2. A high density of embedded nanocrystallites was found to be present in as-implanted amorphous Si. After 350 °C annealing, the density of nanocrystallites was found to decrease, but increase after annealing at 400 °C or higher temperatures. The observation indicated that the implanted silicon became more randomized upon annealing up to 350 °C. The results are discussed in terms of energy variation in the system.
Nanocrystallite , Preamorphization , Ion implantation , Auto-correlation function , High-resolution TEM