Record number :
1000028
Title of article :
Growth of Zn1−xMnxTe films on GaAs(1 0 0) by hot-wall epitaxy
Author/Authors :
H. Kuwabara، نويسنده , , R. Sakamoto، نويسنده , , H. Tatsuoka، نويسنده , , Y. Nakanishi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
4
From page :
267
To page :
270
Abstract :
We have studied the growth of the Zn1−xMnxTe film on the GaAs(1 0 0) substrate by use of hot-wall epitaxy (HWE) system. The growth rate is rather slow and the epitaxial Zn1−xMnxTe films with thickness of about 230 nm are obtained after 6 h deposition. Mn composition can be easily controlled in the range of x=0–0.33 by changing the Mn source temperature (650–680 °C). It, however, is found that the structural quality of the films degrades with increasing Mn composition. Obtained Zn1−xMnxTe films showed photoluminescence originating in Mn2+ ions.
Keywords :
Crystallization , Photoluminescence , Diluted magnetic semiconductor , ZnMnTe , Mn2+
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2003
Link To Document :
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