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Title of article :
Si(1 1 1) step fluctuations in reflection electron microscopy at 1100 °C: anomalous step–step repulsion
Author/Authors :
Robert D. Schroll، نويسنده , , Saul D. Cohen، نويسنده , , T.L Einstein، نويسنده , , J.-J. Métois، نويسنده , , Hailu Gebremariam، نويسنده , , Howard L. Richards، نويسنده , , Ellen D. Williams، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
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Abstract :
Using reflection electron microscopy (REM) we study step fluctuations of Si(1 1 1) at 1100 °C. Sublimation is compensated by flux from a nearby crystal. The fluctuation behavior is qualitatively like that at 900 °C (where evaporation is negligible), with unexplained quantitative differences. Regarding the three parameters of the step continuum model of vicinal surfaces, the step stiffness is about half that at 900 °C, in agreement with theory. Step repulsions are at least six times as strong as predicted from 900 °C, suggesting non-equilibrium effects probably due to electromigration from the heating current. Temporal correlations have a large initial offset (due to slow scanning relative to fluctuations) but show scaling behavior.
Keywords :
Vicinal single crystal surfaces , Reflection electron microscopy , Silicon , Semiconducting surfaces , Models of surface kinetics , Evaporation , Sublimation , Equilibrium thermodynamics and statistical mechanics
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
Link To Document :