Record number :
1000013
Title of article :
Control in the initial growth stage of heteroepitaxial Si1−x−yGexCy on Si(0 0 1) substrates
Author/Authors :
Shigeaki Zaima، نويسنده , , Akira Sakai، نويسنده , , Yukio Yasuda، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
9
From page :
184
To page :
192
Abstract :
The initial growth process of Si1−x−yGexCy epitaxial thin films on Si(0 0 1) surfaces is investigated by scanning tunneling microscopy (STM). The effects of the substrate temperature, the film thickness, and the C fraction in Si1−x−yGexCy on the film morphology are systematically examined on an atomic scale. At low temperatures, multi-layered islands are formed and this islanding is closely related to C atoms segregating to the surface during the film growth. As the temperature increases, the growth mode turns into a step-flow process, although high temperature growth promotes C segregation. In the growth of Si1−x−yGexCy films with large C fractions, phase separation between Si–C and Si–Ge, concomitant with C condensation and three-dimensional (3D) islanding on the surface of the growing films, is dominant. We find that the formation of a thin Si1−xGex layer prior to Si1−x−yGexCy film growth drastically improves the film structure, leading to a planar morphology even with large C fractions present in the film.
Keywords :
Si1?x?yGexCy , Si1?xGex , Scanning tunneling microscopy , Epitaxial growth , Condensation , Phase separation
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2003
Link To Document :
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