Record number :
1000012
Title of article :
Vapor phase techniques for the fabrication of homoepitaxial layers of silicon carbide: process modeling and characterization
Author/Authors :
M Pons، نويسنده , , F Baillet، نويسنده , , E Blanquet، نويسنده , , E Pernot، نويسنده , , R Madar، نويسنده , , D Chaussende، نويسنده , , Mermoux، Michel نويسنده , , L Di Coccio، نويسنده , , P Ferret، نويسنده , , G Feuillet، نويسنده , , C Faure، نويسنده , , Th Billon، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
7
From page :
177
To page :
183
Abstract :
High temperature epitaxial growth processes for SiC bulk and thin films are reviewed from an academic point of view using heat and mass transfer modeling and simulation. The objective is to show that this modeling approach could provide further information to fabrication and characterization for the improvement of the knowledge of the growth history and to quantify the different phenomena leading to growth. Recent results of our integrated research program on SiC taking into account the fabrication, process modeling and characterization will be presented.
Keywords :
Bulk growth , Silicon carbide , Modeling , Epitaxy
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2003
Link To Document :
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