Record number :
Title of article :
Inelastic electron analysis in reflection high-energy electron diffraction condition
Author/Authors :
H. Nakahara، نويسنده , , T. Hishida، نويسنده , , A. Ichimiya، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
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Abstract :
Electron energy loss spectra (EELS) has been measured under reflection high-energy electron diffraction (RHEED) condition using a newly developed energy filtered RHEED measurement system to investigate incident and exit angle dependence of plasmon excitation process. As a specimen, clean Si(1 1 1)7×7 surface is used. From Poisson distribution analysis of EELS spectra, mean number of surface (ns) and volume (nv) plasmon excitation has been obtained. Dependency of ns on incident and exit angle of electron is different from that expected from Lucas theory. It is considered that refraction of electrons near surface region caused the difference. While nv value stays constant for glancing angle, which shows little dependence of effective penetration depth for volume plasmon excitation on glancing angle.
Keywords :
Electron energy loss spectroscopy (EELS) , Reflection high-energy electron diffraction (RHEED) , surface waves , Silicon , Plasmons
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
Link To Document :