Record number :
1000004
Title of article :
Atomic structure and formation process of the Si(1 1 1)–Sb(√7 × √7) surface phase
Author/Authors :
D. Gruznev، نويسنده , , B.V. Rao)، نويسنده , , Y. Furukawa، نويسنده , , M. Mori، نويسنده , , T. Tambo، نويسنده , , V.G. Lifshits، نويسنده , , C. Tatsuyama، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
5
From page :
135
To page :
139
Abstract :
During the study of Sb condensation on the Si(1 1 1)–In(√3×√3) surface phase we observed the formation of a new Sb-induced surface structure with (√7×√7) lattice below 450 °C. This phase may not be prepared by direct Sb deposition on the Si(1 1 1) surface. Instead, the substitution for In atoms from T4 bonding sites by incoming Sb and formation of a γ-phase strongly determine the Sb(√7×√7) formation process. When the concentration of Sb exceeds the value of 0.2 ML the irreversible γ√3→√7 phase transition occurs. Based on STM observations, the structural model for this reconstruction has been proposed.
Keywords :
In(?3×?3) , Sb(?7×?7) , Scanning tunneling microscopy , Mosaic phase , Sb adsorption
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2003
Link To Document :
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