Record number :
1000001
Title of article :
Luminescent properties of single quantum well of CdTe on ZnTe grown by hot-wall epitaxy
Author/Authors :
Y. Yoneyama، نويسنده , , H. Kuwabara، نويسنده , , H. Tatsuoka، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
5
From page :
122
To page :
126
Abstract :
Temperature dependencies of photoluminescence (PL) spectra were investigated on thin single quantum wells (SQWs) of CdTe embedded in ZnTe barrier layer. Four types of SQWs were prepared by hot-wall epitaxy with nominal well thickness of 2, 3, 3.5 and 4 monolayers (MLs). Atomic force microscopy (AFM) investigation on uncapped CdTe layers revealed that the surface of CdTe layers were covered with self-organized cone like shaped dots (SQDs). The PL spectra measured at 4.2 K was composed of two adjoining emission bands. It was clarified that the higher energy PL bands originated from the exciton recombinations in a CdTe wetting layer while the lower energy one originated from the recombination in the SQDs of CdTe. Two thermal activation energies in the energy-integrated PL intensity are determined.
Keywords :
Surface morphology , Cadmium telluride , Low index single crystal surfaces , SQDs , Photoluminescence , Crystallization
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
Serial Year :
2003
Link To Document :
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